philips semiconductors product specification ne/sa/se532/ lm158/258/358/a/2904 low power dual operational amplifiers 1 1995 nov 27 853-1241 16050 description the 532/358/lm2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. operation from dual power supplies is also possible, and the low power supply current drain is independent of the magnitude of the power supply voltage. unique features in the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage. the unity gain cross frequency is temperature-compensated. the input bias current is also temperature-compensated. features ? internally frequency-compensated for unity gain ? large dc voltage gaine100db ? wide bandwidth (unity gain)e1mhz (temperature-compensated) pin configurations 1 2 3 4 5 6 7 8 + + a b v+ output b inverting input b non inverting input b output a inverting input a non inverting input a v d, fe, n packages sl00282 figure 1. pin configuration ? wide power supply range single supplye3v dc to 30v dc or dual suppliese 1.5v dc to 15v dc ? very low supply current drain (400 m a)eessentially independent of supply voltage (1mw/op amp at +5v dc ) ? low input biasing currente45na dc temperature-compensated ? low input offset voltagee2mv dc and offset currente5na dc ? dif ferential input voltage range equal to the power supply voltage ? large output voltagee0v dc to v+ 1.5v dc swing equivalent circuit v + 6 m a 100 m a q2 q3 q1 q4 inputs + q8 q9 c c q10 6 m a q5 q7 q6 r sc output q13 q12 q11 50 m a sl00283 figure 2. equivalent circuit
philips semiconductors product specification ne/sa/se532/ lm158/258/358/a/2904 low power dual operational amplifiers 1995 nov 27 2 ordering information description temperature range order code dwg # 8-pin plastic small outline (so) package 0 to +70 c ne532d sot96-1 8-pin plastic dual in-line package (dip) 0 to +70 c ne532n sot97-1 8-pin plastic small outline (so) package -40 c to +85 c sa532d sot96-1 8-pin plastic dual in-line package (dip) -40 c to +85 c sa532n sot97-1 8-pin ceramic dual in-line package (cerdip) -40 c to +85 c sa532fe 0580a 8-pin plastic small outline (so) package -40 c to +125 c lm2904d sot96-1 8-pin plastic dual in-line package (dip) -40 c to +125 c lm2904n sot97-1 8-pin ceramic dual in-line package (cerdip) -55 c to +125 c lm158fe 0580a 8-pin plastic dual in-line package (dip) -25 c to +125 c LM258N sot97-1 8-pin plastic small outline (so) package -25 c to +125 c lm258d sot96-1 8-pin plastic small outline (so) package 0 to +70 c lm358d sot96-1 8-pin plastic dual in-line package (dip) 0 to +70 c lm358n sot97-1 8-pin plastic dual in-line package (dip) 0 to +70 c lm358an sot97-1 8-pin plastic small outline (so) package 0 to +70 c lm358ad sot96-1 8-pin plastic dual in-line package (dip) -55 c to +125 c se532n sot97-1 8-pin ceramic dual in-line package (cerdip) -55 c to +125 c se532fe 0580a absolute maximum ratings symbol parameter rating unit v s supply voltage, v+ 32 or 16 v dc differential input voltage 32 v dc v in input voltage -0.3 to +32 v dc p d maximum power dissipation t a =25 c (still air) 1 fe package n package d package 780 1160 780 mw mw mw output short-circuit to gnd 5 v+<15 v dc and t a =25 c continuous operating ambient temperature range ne532/lm358/lm358a 0 to +70 c t a lm258 -25 to +85 c lm2904 -40 to +125 c sa532 -40 to +85 c se532/lm158 -55 to +125 c t stg storage temperature range -65 to +150 c t sold lead soldering temperature (10sec max) 300 c notes: 1. derate above 25 c, at the following rates: fe package at 6.2mw/ c n package at 9.3mw/ c d package at 6.2mw/ c
philips semiconductors product specification ne/sa/se532/ lm158/258/358/a/2904 low power dual operational amplifiers 1995 nov 27 3 dc electrical characteristics t a = 25 c, v+=+5v, unless otherwise specified. symbol parameter test conditions se532, lm158/258 ne/sa532/ lm358/lm2904 unit symbol parameter test conditions min typ max min typ max unit v os offset voltage 1 r s =0 w r s =0 w , over temp. 2 5 7 2 7 9 mv mv v os drift r s =0 w , over temp. 7 7 m v/ c i os offset current i in (+)-i in (-) over temp. 3 30 100 5 50 150 na na i os drift over temp. 10 10 pa/ c i bias input current 2 i in (+) or i in (-) over temp., i in (+) or i in (-) 45 40 150 300 45 40 250 500 na na i b drift over temp. 50 50 pa/ c v cm common-mode voltage v+=30v 0 v+-1.5 0 v+-1.5 v range 3 over temp., v+=30v 0 v+-2.0 0 v+-2.0 v cmrr common-mode rejection ratio v+=30v 70 85 65 70 db v oh output voltage swing r l 2k w , v+=30v, over temp. 26 26 v r l 10k w , v+=30v, over temp. 27 28 27 28 v v ol output voltage swing r l 10k w , over temp. 5 20 5 20 mv i cc supply current r l = , v+=30v r l = on all amplifiers, over temp., v+ =30v 0.5 0.6 1.0 1.2 0.5 0.6 1.0 1.2 ma ma a vol large-signal voltage gain r l 2k w , v out 10v, v+=15v (for large v o swing) over temp. 50 25 100 25 15 100 v/mv v/mv psrr supply voltage rejection ratio r s =0 w 65 100 65 100 db amplifier-to-amplifier cou- pling 4 f=1khz to 20khz (input referred) -120 -120 db i out output current source v in+ =+1v dc , v in- =0v dc , v+=15v dc 20 40 20 40 ma v in+ =+1v dc , v in- =0v dc , v+=15v dc , over temp. 10 20 10 20 ma sink v in- =+1v dc , v in+ =0v dc , v+=15v dc 10 20 10 20 ma v in- =+1v dc , v in+ =0v dc , v+=15v dc , over temp. 5 8 5 8 ma v in+ =0v, v in- =+1v dc , v o =200mv 12 50 12 50 m a i sc short circuit current 5 40 60 40 60 ma differential input voltage 6 v+ v+ v gbw unity gain bandwidth t a =25 c 1 1 mhz sr slew rate t a =25 c 0.3 0.3 v/ m s v noise input noise voltage t a =25 c, f=1khz 40 40 nv/ hz
philips semiconductors product specification ne/sa/se532/ lm158/258/358/a/2904 low power dual operational amplifiers 1995 nov 27 4 dc electrical characteristics t a =25 c, v+=+5v, unless otherwise specified. symbol parameter test conditions lm358a unit symbol parameter test conditions min typ max unit v os offset voltage 1 r s =0 w r s =0 w , over temp. 2 3 5 mv mv v os drift r s =0 w , over temp. 7 20 m v/ c i os offset current i in (+)-i in (-) over temp. 5 30 75 na na i os drift over temp. 10 300 pa/ c i bias input current 2 i in (+) or i in (-) over temp., i in (+) or i in (-) 45 40 100 200 na na i b drift over temp. 50 pa/ c v cm common-mode voltage v+=30v 0 v+-1.5 v range 3 over temp., v+=30v 0 v+-2.0 v cmrr common-mode rejection ratio v+=30v 65 85 db v oh output voltage swing r l 2k w , v+=30v, over temp. 26 v r l 10k w , v+=30v, over temp. 27 28 v v ol output voltage swing r l 10k w , over temp. 5 20 mv i cc supply current r l = , v+=30v r l = on all amplifiers, over temp., v+ =30v 0.5 0.6 1.0 1.2 ma ma a vol large-signal voltage gain r l 2k w , v out 10v, v+=15v (for large v o swing) over temp. 25 15 100 v/mv v/mv psrr supply voltage rejection ratio r s =0 w 65 100 db amplifier-to-amplifier coupling 4 f=1khz to 20khz (input referred) -120 db i out output current source v in+ =+1v dc , v in- =0v dc , v+=15v dc 20 40 ma v in+ =+1v dc , v in- =0v dc , v+=15v dc , over temp. 10 20 ma sink v in- =+1v dc , v in+ =0v dc , v+=15v dc 10 20 ma v in- =+1v dc , v in+ =0v dc , v+=15v dc , over temp. 5 8 ma v in+ =0v, v in- =+1v dc , v o =200mv 12 50 m a i sc short circuit current 5 40 60 ma differential input voltage 6 v+ v gbw unity gain bandwidth t a =25 c 1 mhz sr slew rate t a =25 c 0.3 v/ m s v noise input noise voltage t a =25 c, f=1khz 40 nv/ hz notes: 1. v o 1.4v, r s =0 w with v+ from 5v to 30v ; and over the full input common-mode range (0v to v+ -1.5v). 2. the direction of the input current is out of the ic due to the pnp input stage. this current is essentially constant, independent of the state of the output so no loading change exists on the input lines. 3. the input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3v . the upper end of the common-mode voltage range is v+ -1.5v , but either or both inputs can go to +32v without damage. 4. due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. this typically can be detected as this type of capacitance coupling increases at higher frequencies. 5. short-circuits from the output to v+ can cause excessive heating and eventual destruction. the maximum output current is approximately 40ma independent of the magnitude of v+. at values of supply voltage in excess of +15v dc , continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. 6. the input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3v . the upper end of the common-mode voltage range is v+ -1.5v , but either or both inputs can go to +32v dc without damage.
philips semiconductors product specification ne/sa/se532/ lm158/258/358/a/2904 low power dual operational amplifiers 1995 nov 27 5 typical performance characteristics v output vol tage (v ) o + v dc 100k v o 1k + 7 v dc v in 2k t a = 0 o c to +125 o c t a = 55 o c 4 3 2 1 0 0 10 20 30 40 supply voltage (v dc ) supply current drain (ma ) dc 90 80 70 60 50 40 30 20 10 0 55 35 15 5 25 45 65 85 105 125 temperature ( o c) output current (ma ) dc 160 120 80 40 0 0 10 20 30 40 supply voltage (v dc ) r l + 20 k w r l + 2 k w a e vol tage gain (db) vol + v + 10m v o 0.1 m f v + /2 v in v + = 30 v dc and 55 o c < ta < +125 o c v + = 10 to 15 v dc and 55 o c < ta < +125 o c 140 120 100 80 60 40 20 0 1 10 100 1k 10k 100k 1m 10m frequency (hz) voltage gain (db) 20 15 10 5 0 1k 10k 100k 1m frequency (hz) v e output swing (v ) o pp r l < 2k v + 15 v dc 4 3 2 1 0 3 2 1 0 0 10 20 30 40 time ( m s) output vol tage (v) inpout vol tage (v) e o 50pf input output q in 500 450 400 350 300 250 0 1 2 3 4 5 6 7 8 t e time ( m s) ta = +25 o c v + = +30 v dc e output vol tage (mv) o +v + /2 v+ v 2 i o independent of v+ t a = +25 o c 8 7 6 5 4 3 2 1 0.001 0.01 0.1 1 10 100 i o + output source current (ma dc ) v output vol tage reference t o v+ (vd ) dc d v + /2 v + i o t a = +25 o c v + = +5 v dc v + = +15 v dc v + = +30 v dc 10 1 0.1 0.01 0.001 0.01 0.1 1 10 100 i o output sink current (ma dc ) dc v o + + supply current current limiting voltage gain openloop frequency response largesignal frequency response voltagefollower response voltagefollower pulse response (smallsignal) output characteristics current sourcing output characteristics current sinking sl00284 figure 3. typical performance characteristics
philips semiconductors product specification ne/sa/se532/ lm158/258/358/a/2904 low power dual operational amplifiers 1995 nov 27 6 typical performance characteristics (continued) +v e input vol tage ( v ) 15 10 5 negative positive 0 5 10 15 v + or v e power supply voltage (+ v dc ) in dc + v cm = 0 v dc v + = +30 v dc v + = +15 v dc v + = +5 v dc 90 80 70 60 50 40 30 20 10 0 55 35 15 5 25 45 65 85 105 125 t a e temperature (c o ) i input current (na ) b dc 100 100 100k 7.5 v dc v o 100k + + v in +7.5 v dc 120 100 80 60 40 20 0 100 1k 10k 100k 1m f e frequency (hz) cmrr e commonmode rejection ra tio (db) input voltage range input current commonmode rejection ratio sl00285 figure 4. t ypical performance characteristics (cont.) typical applications v+ 2 non-inverting amplifier rf v+ 8 rl v o r in v+ 2 v i n + 4 v+ 8 v o v i n + 4 v+ 10k 10k v+ 8 v o v i n + 4 v+ 10k 10k rf blocks dc. gain r 1 single supply inverting amplifier input biasing voltage follower sl00286 figure 5. typical applications
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